SI4151DY-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.93 грн |
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Технічний опис SI4151DY-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V.
Інші пропозиції SI4151DY-T1-GE3 за ціною від 31.61 грн до 86.46 грн
| Фото | Назва | Виробник | Інформація |
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SI4151DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V |
на замовлення 4129 шт: термін постачання 21-31 дні (днів) |
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SI4151DY-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET P-CHANNEL 30-V MOSFET |
на замовлення 15455 шт: термін постачання 21-30 дні (днів) |
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SI4151DY-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 30V 15.2A 8-Pin SOIC N T/R |
товар відсутній |
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| SI4151DY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8 Kind of package: reel; tape Case: SO8 Drain-source voltage: -30V Drain current: -20.5A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 5.6W Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Gate charge: 87nC Mounting: SMD кількість в упаковці: 2500 шт |
товар відсутній |
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| SI4151DY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8 Kind of package: reel; tape Case: SO8 Drain-source voltage: -30V Drain current: -20.5A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 5.6W Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Gate charge: 87nC Mounting: SMD |
товар відсутній |