SI4151DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис SI4151DY-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI4151DY-T1-GE3 за ціною від 28.90 грн до 134.00 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4151DY-T1-GE3 | Vishay Semiconductors |
MOSFETs SO8 P-CH 30V 15.2A |
на замовлення 7908 шт: термін постачання 21-30 дні (днів) |
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SI4151DY-T1-GE3 | Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
|
| SI4151DY-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs SO8 P-CH 30V 15.2A
MOSFETs SO8 P-CH 30V 15.2A
на замовлення 7908 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 117.59 грн |
| 10+ | 71.81 грн |
| 100+ | 46.10 грн |
| 500+ | 36.44 грн |
| 1000+ | 33.34 грн |
| 2500+ | 29.60 грн |
| 5000+ | 28.90 грн |
| SI4151DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.00 грн |
| 10+ | 82.39 грн |
| 100+ | 55.34 грн |
| 500+ | 41.03 грн |
| 1000+ | 37.53 грн |