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термін постачання 802-811 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.41 грн |
| 10+ | 117.47 грн |
| 100+ | 82.12 грн |
| 250+ | 80.11 грн |
| 500+ | 65.83 грн |
| 1000+ | 62.09 грн |
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Технічний опис SI4190ADY-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 18.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 6W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V.
Інші пропозиції SI4190ADY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI4190ADY-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18.4A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI4190ADY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 18.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V |
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SI4190ADY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 18.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V |
товар відсутній |
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| SI4190ADY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18.4A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |