SI4204DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
| Кількість | Ціна |
|---|---|
| 2500+ | 51.76 грн |
| 5000+ | 48.69 грн |
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Технічний опис SI4204DY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 19.8A, Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V, Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції SI4204DY-T1-GE3 за ціною від 53.14 грн до 196.33 грн
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SI4204DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 19.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19.8A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 10390 шт: термін постачання 21-31 дні (днів) |
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SI4204DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 20V Vgs SO-8 |
на замовлення 12545 шт: термін постачання 21-30 дні (днів) |
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| SI4204DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 173.61 грн |
| 10+ | 108.02 грн |
| 100+ | 74.07 грн |
| 500+ | 55.93 грн |
| SI4204DY-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 20V Vds 20V Vgs SO-8
MOSFETs 20V Vds 20V Vgs SO-8
на замовлення 12545 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 196.33 грн |
| 10+ | 125.27 грн |
| 100+ | 74.72 грн |
| 500+ | 59.91 грн |
| 1000+ | 56.07 грн |
| 2500+ | 53.14 грн |