SI4401BDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
| Кількість | Ціна |
|---|---|
| 2500+ | 58.71 грн |
| 5000+ | 55.46 грн |
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Технічний опис SI4401BDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V.
Інші пропозиції SI4401BDY-T1-GE3 за ціною від 49.69 грн до 196.65 грн
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SI4401BDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V 10.5A 2.9W 14mohm @ 10V |
на замовлення 9321 шт: термін постачання 21-30 дні (днів) |
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SI4401BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 8.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V |
на замовлення 9472 шт: термін постачання 21-31 дні (днів) |
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| SI4401BDY-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V 10.5A 2.9W 14mohm @ 10V
MOSFETs 40V 10.5A 2.9W 14mohm @ 10V
на замовлення 9321 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 189.95 грн |
| 10+ | 121.58 грн |
| 100+ | 72.60 грн |
| 500+ | 58.15 грн |
| 1000+ | 53.57 грн |
| 2500+ | 49.69 грн |
| SI4401BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
на замовлення 9472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 196.65 грн |
| 10+ | 122.09 грн |
| 100+ | 83.85 грн |
| 500+ | 63.33 грн |
| 1000+ | 58.40 грн |