SI4401FDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 9.9A/14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 2500+ | 27.63 грн |
| 5000+ | 24.65 грн |
| 7500+ | 23.65 грн |
| 12500+ | 21.14 грн |
| 17500+ | 20.52 грн |
| 25000+ | 20.20 грн |
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Технічний опис SI4401FDY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 14A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2.3V, Verlustleistung: 5W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0142ohm.
Інші пропозиції SI4401FDY-T1-GE3 за ціною від 20.44 грн до 127.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4401FDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 2.3V Verlustleistung: 5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0142ohm |
на замовлення 52500 шт: термін постачання 21-31 дні (днів) |
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SI4401FDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.3V Verlustleistung: 5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0142ohm |
на замовлення 245950 шт: термін постачання 21-31 дні (днів) |
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SI4401FDY-T1-GE3 | Vishay / Siliconix |
MOSFETs -40V Vds 20V Vgs SO-8 |
на замовлення 25441 шт: термін постачання 21-30 дні (днів) |
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SI4401FDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SO8 Technology: TrenchFET® Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A Gate charge: 31nC On-state resistance: 18.3mΩ Power dissipation: 3.2W Gate-source voltage: ±20V |
на замовлення 2200 шт: термін постачання 14-30 дні (днів) |
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SI4401FDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 9.9A/14A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V |
на замовлення 58405 шт: термін постачання 21-31 дні (днів) |
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SI4401FDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.3V Verlustleistung: 5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0142ohm |
на замовлення 245950 шт: термін постачання 21-31 дні (днів) |
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Виробник: VISHAY
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 35.85 грн |
| 7500+ | 33.71 грн |
| SI4401FDY-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
на замовлення 245950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 53.37 грн |
| 500+ | 38.71 грн |
| 1000+ | 32.63 грн |
| SI4401FDY-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs -40V Vds 20V Vgs SO-8
MOSFETs -40V Vds 20V Vgs SO-8
на замовлення 25441 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.05 грн |
| 10+ | 55.44 грн |
| 100+ | 31.86 грн |
| 500+ | 24.81 грн |
| 1000+ | 22.48 грн |
| 2500+ | 20.44 грн |
| SI4401FDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Technology: TrenchFET®
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -11A
Gate charge: 31nC
On-state resistance: 18.3mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Technology: TrenchFET®
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -11A
Gate charge: 31nC
On-state resistance: 18.3mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 94.11 грн |
| 7+ | 69.06 грн |
| 10+ | 60.24 грн |
| 100+ | 37.67 грн |
| 500+ | 30.80 грн |
| SI4401FDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 9.9A/14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Description: MOSFET P-CH 40V 9.9A/14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 58405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 62.99 грн |
| 100+ | 41.79 грн |
| 500+ | 30.69 грн |
| 1000+ | 27.94 грн |
| SI4401FDY-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
Description: VISHAY - SI4401FDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.0142 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0142ohm
на замовлення 245950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 127.46 грн |
| 50+ | 80.34 грн |
| 100+ | 53.37 грн |
| 500+ | 38.71 грн |
| 1000+ | 32.63 грн |