SI4403CDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
| Кількість | Ціна |
|---|---|
| 2500+ | 20.67 грн |
| 5000+ | 18.36 грн |
| 7500+ | 17.58 грн |
| 12500+ | 15.67 грн |
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Технічний опис SI4403CDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO, Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V.
Інші пропозиції SI4403CDY-T1-GE3 за ціною від 19.52 грн до 88.81 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4403CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A Case: SO8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -13.4A Gate charge: 90nC On-state resistance: 25mΩ Power dissipation: 5W Gate-source voltage: ±8V |
на замовлення 2097 шт: термін постачання 14-30 дні (днів) |
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SI4403CDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 13.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V |
на замовлення 15918 шт: термін постачання 21-31 дні (днів) |
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SI4403CDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 1.8V P-Channel |
на замовлення 40323 шт: термін постачання 21-30 дні (днів) |
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| SI4403CDY-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -13.4A
Gate charge: 90nC
On-state resistance: 25mΩ
Power dissipation: 5W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -13.4A
Gate charge: 90nC
On-state resistance: 25mΩ
Power dissipation: 5W
Gate-source voltage: ±8V
на замовлення 2097 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 76.75 грн |
| 10+ | 51.84 грн |
| 50+ | 35.46 грн |
| 100+ | 30.46 грн |
| SI4403CDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
на замовлення 15918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.41 грн |
| 100+ | 31.82 грн |
| 500+ | 23.17 грн |
| 1000+ | 21.01 грн |
| SI4403CDY-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 1.8V P-Channel
MOSFETs 1.8V P-Channel
на замовлення 40323 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 54.79 грн |
| 100+ | 31.36 грн |
| 500+ | 24.32 грн |
| 1000+ | 22.06 грн |
| 2500+ | 19.52 грн |