SI4403DDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 2500+ | 14.83 грн |
| 5000+ | 13.09 грн |
| 7500+ | 12.48 грн |
| 12500+ | 11.07 грн |
| 17500+ | 10.69 грн |
| 25000+ | 10.32 грн |
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Технічний опис SI4403DDY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 15.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0105ohm, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції SI4403DDY-T1-GE3 за ціною від 9.23 грн до 75.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4403DDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 15.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0105ohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 1316 шт: термін постачання 21-31 дні (днів) |
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SI4403DDY-T1-GE3 | Vishay / Siliconix |
MOSFETs -20V Vds 8V Vgs SO-8 |
на замовлення 24100 шт: термін постачання 21-30 дні (днів) |
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SI4403DDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SO8 Technology: TrenchFET® Drain-source voltage: -20V Drain current: -12.3A Gate charge: 39nC On-state resistance: 14mΩ Power dissipation: 3.2W Gate-source voltage: ±8V Kind of package: reel; tape |
на замовлення 1708 шт: термін постачання 14-30 дні (днів) |
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SI4403DDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 15.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V |
на замовлення 60783 шт: термін постачання 21-31 дні (днів) |
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SI4403DDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 15.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0105ohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 1316 шт: термін постачання 21-31 дні (днів) |
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| SI4403DDY-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0105ohm
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0105ohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 1316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 33.06 грн |
| 500+ | 26.04 грн |
| 1000+ | 21.99 грн |
| SI4403DDY-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs -20V Vds 8V Vgs SO-8
MOSFETs -20V Vds 8V Vgs SO-8
на замовлення 24100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 35.19 грн |
| 11+ | 29.59 грн |
| 100+ | 17.97 грн |
| 500+ | 14.03 грн |
| 1000+ | 11.42 грн |
| 2500+ | 9.66 грн |
| 10000+ | 9.23 грн |
| SI4403DDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Drain-source voltage: -20V
Drain current: -12.3A
Gate charge: 39nC
On-state resistance: 14mΩ
Power dissipation: 3.2W
Gate-source voltage: ±8V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SO8
Technology: TrenchFET®
Drain-source voltage: -20V
Drain current: -12.3A
Gate charge: 39nC
On-state resistance: 14mΩ
Power dissipation: 3.2W
Gate-source voltage: ±8V
Kind of package: reel; tape
на замовлення 1708 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 45.68 грн |
| 18+ | 24.60 грн |
| 100+ | 24.01 грн |
| SI4403DDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
Description: MOSFET P-CH 20V 15.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
на замовлення 60783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 36.27 грн |
| 100+ | 23.49 грн |
| 500+ | 16.88 грн |
| 1000+ | 15.21 грн |
| SI4403DDY-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0105ohm
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI4403DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 15.4 A, 0.0105 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0105ohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 1316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 75.32 грн |
| 18+ | 46.79 грн |
| 100+ | 33.06 грн |
| 500+ | 26.04 грн |
| 1000+ | 21.99 грн |