Технічний опис SI4409DY-T1-E3 VISHAY
Description: MOSFET P-CH 150V 1.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V.
Інші пропозиції SI4409DY-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI4409DYT1E3 | Виробник : VISHAY |
на замовлення 32500 шт: термін постачання 14-28 дні (днів) |
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SI4409DY-T1-E3 | Виробник : Vishay Siliconix |
 Description: MOSFET P-CH 150V 1.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V |
товар відсутній |