SI4425FDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2500+ | 18.79 грн |
| 5000+ | 16.67 грн |
| 7500+ | 15.95 грн |
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Технічний опис SI4425FDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V.
Інші пропозиції SI4425FDY-T1-GE3 за ціною від 17.55 грн до 83.05 грн
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SI4425FDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V |
на замовлення 10115 шт: термін постачання 21-31 дні (днів) |
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SI4425FDY-T1-GE3 | Vishay / Siliconix |
MOSFETs SO8 P-CH 30V 12.7A |
на замовлення 61684 шт: термін постачання 21-30 дні (днів) |
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| SI4425FDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 10115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 67.40 грн |
| 10+ | 44.44 грн |
| 100+ | 29.11 грн |
| 500+ | 21.13 грн |
| 1000+ | 19.14 грн |
| SI4425FDY-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs SO8 P-CH 30V 12.7A
MOSFETs SO8 P-CH 30V 12.7A
на замовлення 61684 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.05 грн |
| 10+ | 51.06 грн |
| 100+ | 29.25 грн |
| 500+ | 22.70 грн |
| 1000+ | 20.58 грн |
| 2500+ | 18.25 грн |
| 5000+ | 17.55 грн |