SI4427BDY-T1-GE3 Vishay Semiconductors
на замовлення 2294 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.06 грн |
| 10+ | 100.58 грн |
| 100+ | 69.43 грн |
| 250+ | 64.56 грн |
| 500+ | 58.28 грн |
| 1000+ | 49.94 грн |
| 2500+ | 48.8 грн |
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Технічний опис SI4427BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 9.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V.
Інші пропозиції SI4427BDY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI4427BDY-T1-GE3 | Виробник : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -50A Technology: TrenchFET® Case: SO8 Mounting: SMD On-state resistance: 19.5mΩ Kind of package: reel; tape Power dissipation: 2.5W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -12.6A Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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SI4427BDY-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R |
товар відсутній |
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SI4427BDY-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R |
товар відсутній |
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SI4427BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 9.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
товар відсутній |
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SI4427BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 9.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
товар відсутній |
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| SI4427BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -50A Technology: TrenchFET® Case: SO8 Mounting: SMD On-state resistance: 19.5mΩ Kind of package: reel; tape Power dissipation: 2.5W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -12.6A Type of transistor: P-MOSFET |
товар відсутній |