SI4434ADY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 250V 2.8A/4.1A 8SO, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.9W (Ta), 6W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).