SI4447DY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 3.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 15V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.1W (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta).