Si4456DY-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 40V 33A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).