SI4459BDY-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 3+ | 112.65 грн |
| 10+ | 75.95 грн |
| 100+ | 44.26 грн |
| 500+ | 34.89 грн |
| 1000+ | 31.86 грн |
| 2500+ | 31.22 грн |
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Технічний опис SI4459BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V.
Інші пропозиції SI4459BDY-T1-GE3 за ціною від 39.65 грн до 140.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4459BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 20.5A/27.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V |
на замовлення 1391 шт: термін постачання 21-31 дні (днів) |
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| SI4459BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 86.28 грн |
| 100+ | 58.18 грн |
| 500+ | 43.28 грн |
| 1000+ | 39.65 грн |