SI4463BDY-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 170.30 грн |
| 10+ | 105.37 грн |
| 100+ | 71.77 грн |
| 500+ | 53.85 грн |
| 1000+ | 49.51 грн |
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Технічний опис SI4463BDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V.
Інші пропозиції SI4463BDY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI4463BDY-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R |
товару немає в наявності |
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 |
SI4463BDY-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R |
товару немає в наявності |
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| SI4463BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 2500 шт |
товару немає в наявності |
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SI4463BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V |
товару немає в наявності |
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SI4463BDY-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 20V 13.7A 3.0W 11mohm @ 10V |
товару немає в наявності |
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| SI4463BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.8A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |