SI4463CDY-T1-GE3 Vishay Semiconductors

Description: MOSFET P-CH 20V 13.6A/49A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Power Dissipation (Max): 2.7W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V.