SI4497DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
| Кількість | Ціна |
|---|---|
| 2500+ | 52.91 грн |
| 5000+ | 49.75 грн |
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Технічний опис SI4497DY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc).
Інші пропозиції SI4497DY-T1-GE3 за ціною від 57.15 грн до 225.31 грн
| Фото | Назва | Виробник | Інформація |
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SI4497DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 36A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V |
на замовлення 13516 шт: термін постачання 21-31 дні (днів) |
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SI4497DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -29A; 5W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -29A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 90nC |
на замовлення 2193 шт: термін постачання 14-30 дні (днів) |
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SI4497DY-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs SO-8 |
на замовлення 7465 шт: термін постачання 21-30 дні (днів) |
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| SI4497DY-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
на замовлення 13516 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 164.93 грн |
| 10+ | 110.49 грн |
| 100+ | 75.75 грн |
| 500+ | 57.15 грн |
| SI4497DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -29A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -29A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 90nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -29A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -29A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 90nC
на замовлення 2193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 196.44 грн |
| 5+ | 145.92 грн |
| 10+ | 128.11 грн |
| 50+ | 95.02 грн |
| 100+ | 89.08 грн |
| SI4497DY-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs SO-8
MOSFETs -30V Vds 20V Vgs SO-8
на замовлення 7465 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 225.31 грн |
| 10+ | 144.28 грн |
| 100+ | 86.69 грн |
| 500+ | 70.34 грн |
| 1000+ | 67.87 грн |
| 2500+ | 63.65 грн |