Технічний опис SI4501BDY-T1-GE3 Vishay
Description: MOSFET N/P-CH 30V/8V 12A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W, 3.1W, Drain to Source Voltage (Vdss): 30V, 8V, Current - Continuous Drain (Id) @ 25°C: 12A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V, Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції SI4501BDY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI4501BDY-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R |
товару немає в наявності |
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SI4501BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 12A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W, 3.1W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 12A, 8A Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
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SI4501BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 12A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W, 3.1W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 12A, 8A Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
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SI4501BDY-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs -8V Vds 8V Vgs SO-8 N&P PAIR |
товару немає в наявності |
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| SI4501BDY-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-8V; 12/-8A; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 42/25nC On-state resistance: 37/20mΩ Power dissipation: 3.1/4.5W Gate-source voltage: ±8/±20V Drain current: 12/-8A Drain-source voltage: 30/-8V |
товару немає в наявності |