SI4559ADY-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 3+ | 118.94 грн |
| 10+ | 85.12 грн |
| 100+ | 59.63 грн |
| 500+ | 52.44 грн |
| 1000+ | 49.02 грн |
| 2500+ | 45.04 грн |
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Технічний опис SI4559ADY-T1-GE3 Vishay Semiconductors
Description: MOSFET N/P-CH 60V 5.3A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A, Drain to Source Voltage (Vdss): 60V, Power - Max: 3.1W, 3.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI4559ADY-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| SI4559ADY-T1-GE3 | Vishay Siliconix |
 (замена SI4559EY) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SI4559ADY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 60V 5.3A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W, 3.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SI4559ADY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 60V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W, 3.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4559ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
(замена SI4559EY) Транзистори
(замена SI4559EY) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| SI4559ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W, 3.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W, 3.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SI4559ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.