SI4561DY-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 40V 6.8A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A, Drain to Source Voltage (Vdss): 40V, Power - Max: 3W, 3.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).