SI4565ADY-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Відгуки про товар
Написати відгук
Технічний опис SI4565ADY-T1-E3 Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V, Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4565ADY-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
SI4565ADY-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 40V 6.6A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A Drain to Source Voltage (Vdss): 40V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4565ADY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.