| Кількість | Ціна |
|---|---|
| 2+ | 175.15 грн |
| 10+ | 110.23 грн |
| 100+ | 65.97 грн |
| 500+ | 52.65 грн |
| 1000+ | 48.84 грн |
| 2500+ | 45.18 грн |
| 5000+ | 44.76 грн |
Відгуки про товар
Написати відгук
Технічний опис SI4816BDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI4816BDY-T1-E3 за ціною від 52.14 грн до 179.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4816BDY-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOICPart Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2148 шт: термін постачання 21-31 дні (днів) |
|
| SI4816BDY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 179.20 грн |
| 10+ | 109.34 грн |
| 100+ | 75.48 грн |
| 500+ | 56.69 грн |
| 1000+ | 52.14 грн |