SI4848BDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 20.29 грн |
| 5000+ | 17.46 грн |
| 7500+ | 17.26 грн |
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Технічний опис SI4848BDY-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI4848BDY-T1-GE3 за ціною від 14.52 грн до 57.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI4848BDY-T1-GE3 | Vishay / Siliconix |
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V |
на замовлення 3087 шт: термін постачання 21-30 дні (днів) |
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SI4848BDY-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET SO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc) |
на замовлення 9803 шт: термін постачання 21-31 дні (днів) |
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| SI4848BDY-T1-GE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V
на замовлення 3087 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.18 грн |
| 10+ | 40.61 грн |
| 100+ | 26.85 грн |
| 500+ | 21.00 грн |
| 1000+ | 19.03 грн |
| 2500+ | 16.77 грн |
| 5000+ | 14.52 грн |
| SI4848BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
на замовлення 9803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.09 грн |
| 10+ | 41.08 грн |
| 100+ | 31.18 грн |
| 500+ | 22.87 грн |
| 1000+ | 20.71 грн |