SI4914BDY-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-SOIC.