Si4914BDY-T1-E3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.7W, 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge).