SI4922BDY-T1-GE3 Vishay Semiconductors
на замовлення 4741 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 177.02 грн |
| 10+ | 118.93 грн |
| 100+ | 71.49 грн |
| 500+ | 57.90 грн |
| 1000+ | 53.52 грн |
| 2500+ | 50.58 грн |
| 5000+ | 49.45 грн |
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Технічний опис SI4922BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції SI4922BDY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI4922BDY-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R |
товару немає в наявності |
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SI4922BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
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SI4922BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
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| SI4922BDY-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 35A Drain current: 8A Gate charge: 62nC Type of transistor: N-MOSFET x2 On-state resistance: 24mΩ Power dissipation: 3.1W Gate-source voltage: ±12V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |