на замовлення 1144 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.78 грн |
| 10+ | 42.81 грн |
| 100+ | 25.45 грн |
| 500+ | 21.26 грн |
| 1000+ | 18.10 грн |
| 2500+ | 17.88 грн |
| 5000+ | 15.16 грн |
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Технічний опис SI4936CDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 5.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4936CDY-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI4936CDY-T1-E3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 5.8A 8-Pin SO T/R |
товару немає в наявності |
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SI4936CDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
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SI4936CDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
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SI4936CDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |