на замовлення 2214 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.87 грн |
| 10+ | 97.26 грн |
| 100+ | 67.26 грн |
| 250+ | 63.8 грн |
| 500+ | 56.2 грн |
| 1000+ | 49.28 грн |
| 5000+ | 48.81 грн |
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Технічний опис SI4943CDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 20V 8A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V, Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4943CDY-T1-E3
| Фото | Назва | Виробник | Інформація |
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|---|---|---|---|---|---|
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SI4943CDY-T1-E3 | Виробник : Vishay |
 Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R |
товар відсутній |
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| SI4943CDY-T1-E3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI4943CDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
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SI4943CDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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| SI4943CDY-T1-E3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced |
товар відсутній |