SI4953ADY-T1-GE3 Vishay

Description: MOSFET 2P-CH 30V 3.7A 8SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.7A, Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC.