SI5403DC-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 6A 1206-8, Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).