SI5424DC-T1-GE3 Vishay Semiconductors
на замовлення 2125 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.53 грн |
| 10+ | 67.76 грн |
| 100+ | 40.21 грн |
| 500+ | 33.54 грн |
| 1000+ | 28.57 грн |
| 3000+ | 25.93 грн |
| 6000+ | 24.07 грн |
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Технічний опис SI5424DC-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 6A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V.
Інші пропозиції SI5424DC-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI5424DC-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 30V 6A 1206-8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 620 шт: термін постачання 21-31 дні (днів) |
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SI5424DC-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R |
товару немає в наявності |
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SI5424DC-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 6A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
товару немає в наявності |
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| SI5424DC-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 40A; 6.25W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 40A Power dissipation: 6.25W Case: PowerPAK® ChipFET Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |