SI5459DU-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® ChipFET™ Single
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Single
Packaging: Tape & Reel (TR)
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Технічний опис SI5459DU-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® ChipFET™ Single, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® ChipFET™ Single, Packaging: Tape & Reel (TR).
Інші пропозиції SI5459DU-T1-GE3 за ціною від 13.55 грн до 67.29 грн
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SI5459DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® ChipFET™ Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V |
на замовлення 3891 шт: термін постачання 21-31 дні (днів) |
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SI5459DU-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs PowerPAK ChipFET |
на замовлення 16918 шт: термін постачання 21-30 дні (днів) |
|
| SI5459DU-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
на замовлення 3891 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 66.77 грн |
| 10+ | 39.71 грн |
| 100+ | 25.91 грн |
| 500+ | 18.72 грн |
| 1000+ | 16.92 грн |
| SI5459DU-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs PowerPAK ChipFET
MOSFETs -20V Vds 12V Vgs PowerPAK ChipFET
на замовлення 16918 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 67.29 грн |
| 10+ | 42.00 грн |
| 100+ | 23.81 грн |
| 500+ | 18.36 грн |
| 1000+ | 16.55 грн |
| 3000+ | 14.31 грн |
| 6000+ | 13.55 грн |