| Кількість | Ціна |
|---|---|
| 4+ | 94.56 грн |
| 10+ | 62.49 грн |
| 100+ | 41.23 грн |
| 500+ | 33.90 грн |
| 1000+ | 28.47 грн |
| 3000+ | 25.80 грн |
| 6000+ | 25.30 грн |
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Технічний опис SI5504BDC-T1-E3 Vishay Semiconductors
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8, Part Status: Active, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.12W, 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SI5504BDC-T1-E3 за ціною від 31.49 грн до 115.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI5504BDC-T1-E3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W, 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
на замовлення 2690 шт: термін постачання 21-31 дні (днів) |
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| SI5504BDC-T1-E3 |
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на замовлення 12000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| SI5504BDC-T1-E3 |
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Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
на замовлення 2690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 115.77 грн |
| 10+ | 70.40 грн |
| 100+ | 46.89 грн |
| 500+ | 34.53 грн |
| 1000+ | 31.49 грн |