Технічний опис SI5509DC-T1-E3 Vishay
Description: MOSFET N/P-CH 20V 6.1A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Інші пропозиції SI5509DC-T1-E3
Фото | Назва | Виробник | Інформація |
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SI5509DC-T1-E3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
товару немає в наявності |
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SI5509DC-T1-E3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
товару немає в наявності |