SI5515CDC-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
| Кількість | Ціна |
|---|---|
| 3000+ | 22.36 грн |
| 6000+ | 19.92 грн |
| 9000+ | 19.10 грн |
| 15000+ | 17.06 грн |
| 21000+ | 16.55 грн |
| 30000+ | 16.11 грн |
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Технічний опис SI5515CDC-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V, Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Інші пропозиції SI5515CDC-T1-GE3 за ціною від 18.40 грн до 88.02 грн
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SI5515CDC-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs 1206-8 ChipFET |
на замовлення 31767 шт: термін постачання 21-30 дні (днів) |
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SI5515CDC-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
на замовлення 48567 шт: термін постачання 21-31 дні (днів) |
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| SI5515CDC-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs 1206-8 ChipFET
MOSFETs -20V Vds 8V Vgs 1206-8 ChipFET
на замовлення 31767 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 85.52 грн |
| 10+ | 53.01 грн |
| 100+ | 30.45 грн |
| 500+ | 23.61 грн |
| 1000+ | 21.43 грн |
| 3000+ | 19.95 грн |
| 6000+ | 18.40 грн |
| SI5515CDC-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
на замовлення 48567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.02 грн |
| 10+ | 53.22 грн |
| 100+ | 35.08 грн |
| 500+ | 25.57 грн |
| 1000+ | 23.21 грн |