SI5517DU-T1-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 3+ | 117.59 грн |
| 10+ | 75.62 грн |
| 100+ | 45.11 грн |
| 500+ | 37.78 грн |
| 1000+ | 33.83 грн |
| 3000+ | 31.65 грн |
| 6000+ | 29.60 грн |
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Технічний опис SI5517DU-T1-GE3 Vishay / Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 8.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® ChipFet Dual.
Інші пропозиції SI5517DU-T1-GE3 за ціною від 35.93 грн до 130.04 грн
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SI5517DU-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 20V 6A CHIPFETPackaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 8.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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| SI5517DU-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Description: MOSFET N/P-CH 20V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.04 грн |
| 10+ | 79.26 грн |
| 100+ | 53.11 грн |
| 500+ | 39.32 грн |
| 1000+ | 35.93 грн |