Технічний опис SI5853CDC-T1-E3 VISHAY
Description: MOSFET P-CH 20V 4A 1206-8, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Інші пропозиції SI5853CDC-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI5853CDC-T1-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 4A 1206-8Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. |
| SI5853CDC-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.