SI5902BDC-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 4+ | 96.21 грн |
| 10+ | 77.65 грн |
| 100+ | 51.66 грн |
| 500+ | 43.56 грн |
| 1000+ | 36.23 грн |
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Технічний опис SI5902BDC-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.12W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Інші пропозиції SI5902BDC-T1-GE3 за ціною від 39.58 грн до 141.14 грн
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SI5902BDC-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 4A 1206-8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
на замовлення 3482 шт: термін постачання 21-31 дні (днів) |
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| SI5902BDC-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
на замовлення 3482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.14 грн |
| 10+ | 86.51 грн |
| 100+ | 58.21 грн |
| 500+ | 43.25 грн |
| 1000+ | 39.58 грн |