SI5915DC-T1-E3 VISHAY

Description: MOSFET 2P-CH 8V 3.4A 1206-8, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Drain to Source Voltage (Vdss): 8V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min).