Технічний опис SI5920DC-T1-E3 VISHAY
Description: MOSFET 2N-CH 8V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.12W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V, Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Інші пропозиції SI5920DC-T1-E3
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SI5920DC-T1-E3 | Виробник : Vishay Siliconix |
 Description: MOSFET 2N-CH 8V 4A 1206-8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
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SI5920DC-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 8V 4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
товар відсутній |