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SI5933DC-T1-E3 VISHAY



Виробник: VISHAY

на замовлення 12000 шт:

термін постачання 14-28 дні (днів)
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Технічний опис SI5933DC-T1-E3 VISHAY

Description: MOSFET 2P-CH 20V 2.7A 1206-8, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.

Інші пропозиції SI5933DC-T1-E3

Фото Назва Виробник Інформація Доступність Ціна
SI5933DC-T1-E3 SI5933DC-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
товару немає в наявності
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SI5933DC-T1-E3 SI5933DC-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SI5933DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 1206-8
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
SI5933DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.