SI5935CDC-T1-E3 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.14 грн |
| 10+ | 34.38 грн |
| 100+ | 19.40 грн |
| 500+ | 14.84 грн |
| 1000+ | 13.39 грн |
| 3000+ | 13.05 грн |
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Технічний опис SI5935CDC-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 20V 4A 1206-8, Part Status: Active, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SI5935CDC-T1-E3 за ціною від 14.99 грн до 59.80 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI5935CDC-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 20V 4A 1206-8Part Status: Active Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2817 шт: термін постачання 21-31 дні (днів) |
|
| SI5935CDC-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.80 грн |
| 10+ | 35.90 грн |
| 100+ | 23.21 грн |
| 500+ | 16.65 грн |
| 1000+ | 14.99 грн |