SI5935CDC-T1-E3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
на замовлення 2817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.58 грн |
| 10+ | 28.72 грн |
| 100+ | 19.98 грн |
| 500+ | 14.64 грн |
| 1000+ | 11.9 грн |
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Технічний опис SI5935CDC-T1-E3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Інші пропозиції SI5935CDC-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SI5935CDC-T1-E3 | Виробник : Vishay / Siliconix |
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET |
на замовлення 10501 шт: термін постачання 21-30 дні (днів) |
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SI5935CDC-T1-E3 | Виробник : Vishay |
Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R |
товар відсутній |
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| SI5935CDC-T1-E3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 3.1W Gate-source voltage: ±8V On-state resistance: 156mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI5935CDC-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
товар відсутній |
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| SI5935CDC-T1-E3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 3.1W Gate-source voltage: ±8V On-state resistance: 156mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |