SI5948DU-T1-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SI5948DU-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.065 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK ChipFET
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.065ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 7W
Betriebstemperatur, max.: 150°C
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Технічний опис SI5948DU-T1-GE3 VISHAY
Description: VISHAY - SI5948DU-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.065 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 40V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK ChipFET, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.065ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 7W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SI5948DU-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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Si5948DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® ChipFet Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
Si5948DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFet Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
Si5948DU-T1-GE3 | Vishay / Siliconix |
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. |
| Si5948DU-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W Case: ChipFET8 Mounting: SMD Kind of package: reel; tape Case - inch: 1206 On-state resistance: 94mΩ Case - mm: 3216 Pulsed drain current: 10A Power dissipation: 7W Gate charge: 5nC Polarisation: unipolar Technology: TrenchFET® Drain current: 6A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| Si5948DU-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si5948DU-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| Si5948DU-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| Si5948DU-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Case: ChipFET8
Mounting: SMD
Kind of package: reel; tape
Case - inch: 1206
On-state resistance: 94mΩ
Case - mm: 3216
Pulsed drain current: 10A
Power dissipation: 7W
Gate charge: 5nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Case: ChipFET8
Mounting: SMD
Kind of package: reel; tape
Case - inch: 1206
On-state resistance: 94mΩ
Case - mm: 3216
Pulsed drain current: 10A
Power dissipation: 7W
Gate charge: 5nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.