SI6415DQ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
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Технічний опис SI6415DQ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V.
Інші пропозиції SI6415DQ-T1-GE3 за ціною від 46.32 грн до 165.91 грн
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SI6415DQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 6.5A 8TSSOP Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 5069 шт: термін постачання 21-31 дні (днів) |
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SI6415DQ-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V |
на замовлення 12868 шт: термін постачання 21-30 дні (днів) |
|
| SI6415DQ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 5069 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.37 грн |
| 10+ | 101.56 грн |
| 100+ | 80.84 грн |
| 500+ | 64.20 грн |
| 1000+ | 54.47 грн |
| SI6415DQ-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V
на замовлення 12868 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.91 грн |
| 10+ | 111.94 грн |
| 100+ | 68.27 грн |
| 500+ | 54.61 грн |
| 1000+ | 54.12 грн |
| 3000+ | 46.32 грн |