SI6562CDQ-T1-BE3 Vishay Siliconix

Description: MOSFET N/P-CH 20V 5.7A 8TSSOP, Part Status: Active, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).