SI6562CDQ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27.41 грн |
| 6000+ | 24.54 грн |
| 9000+ | 23.73 грн |
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Технічний опис SI6562CDQ-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, 1.7W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP.
Інші пропозиції SI6562CDQ-T1-GE3 за ціною від 28.23 грн до 115.17 грн
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SI6562CDQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-TSSOP |
на замовлення 34187 шт: термін постачання 21-31 дні (днів) |
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SI6562CDQ-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR |
на замовлення 7357 шт: термін постачання 21-30 дні (днів) |
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| SI6562CDQ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 34187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.29 грн |
| 10+ | 63.05 грн |
| 100+ | 42.02 грн |
| 500+ | 30.96 грн |
| 1000+ | 28.23 грн |
| SI6562CDQ-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR
MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR
на замовлення 7357 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.17 грн |
| 10+ | 71.69 грн |
| 100+ | 41.49 грн |
| 500+ | 36.73 грн |