Si6562DQ-T1-E3 VISHAY

Description: MOSFET N/P-CH 20V 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Cut Tape (CT).