SI6924AEDQ-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис SI6924AEDQ-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A, Drain to Source Voltage (Vdss): 28V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI6924AEDQ-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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SI6924AEDQ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 28V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SI6924AEDQ-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.