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SI6963BDQ-T1-E3 VISHAY



Виробник: VISHAY
09+
на замовлення 2502 шт:

термін постачання 14-28 дні (днів)
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Технічний опис SI6963BDQ-T1-E3 VISHAY

Description: MOSFET 2P-CH 20V 3.4A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual).

Інші пропозиції SI6963BDQ-T1-E3

Фото Назва Виробник Інформація Доступність Ціна
SI6963BDQ-T1-E3 SI6963BDQ-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
товару немає в наявності
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SI6963BDQ-T1-E3 SI6963BDQ-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SI6963BDQ-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
товару немає в наявності
В кошику  од. на суму  грн.
SI6963BDQ-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.