SI7220DN-T1-E3 Vishay Semiconductors

Description: MOSFET 2N-CH 60V 3.4A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).